Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
1.144 OMR
1.144 OMR Each (ex VAT)
1.201 OMR
1.201 OMR Each (inc. VAT)
1
1.144 OMR
1.144 OMR Each (ex VAT)
1.201 OMR
1.201 OMR Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 4 | 1.144 OMR |
5 - 9 | 1.062 OMR |
10 - 24 | 1.028 OMR |
25 - 49 | 1.006 OMR |
50+ | 0.962 OMR |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details