Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
5.170 OMR
1.034 OMR Each (In a Pack of 5) (ex VAT)
5.428 OMR
1.086 OMR Each (In a Pack of 5) (inc. VAT)
5
5.170 OMR
1.034 OMR Each (In a Pack of 5) (ex VAT)
5.428 OMR
1.086 OMR Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 1.034 OMR | 5.170 OMR |
| 25 - 45 | 0.781 OMR | 3.905 OMR |
| 50 - 120 | 0.710 OMR | 3.548 OMR |
| 125 - 245 | 0.666 OMR | 3.328 OMR |
| 250+ | 0.654 OMR | 3.272 OMR |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
15.5 x 4.5 x 20mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details


