Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Country of Origin
China
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
5.032 OMR
1.006 OMR Each (In a Pack of 5) (ex VAT)
5.284 OMR
1.056 OMR Each (In a Pack of 5) (inc. VAT)
5
5.032 OMR
1.006 OMR Each (In a Pack of 5) (ex VAT)
5.284 OMR
1.056 OMR Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 1.006 OMR | 5.032 OMR |
25 - 45 | 0.759 OMR | 3.795 OMR |
50 - 120 | 0.688 OMR | 3.438 OMR |
125 - 245 | 0.649 OMR | 3.245 OMR |
250+ | 0.638 OMR | 3.190 OMR |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.5 x 4.5 x 20mm
Country of Origin
China
Product details