Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

RS Stock No.: 760-3123Brand: ToshibaManufacturers Part No.: 2SK208-R(TE85L,F)
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

0.3 to 0.75mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Configuration

Single

Transistor Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-346 (SC-59)

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Length

2.9mm

Product details

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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0.165 OMR

Each (In a Pack of 10) (ex VAT)

0.173 OMR

Each (In a Pack of 10) (inc VAT)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
Select packaging type

0.165 OMR

Each (In a Pack of 10) (ex VAT)

0.173 OMR

Each (In a Pack of 10) (inc VAT)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 900.165 OMR1.650 OMR
100 - 1900.110 OMR1.100 OMR
200 - 3900.100 OMR1.000 OMR
400+0.100 OMR1.000 OMR

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Idss Drain-Source Cut-off Current

0.3 to 0.75mA

Maximum Drain Source Voltage

10 V

Maximum Gate Source Voltage

-30 V

Maximum Drain Gate Voltage

-50V

Configuration

Single

Transistor Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-346 (SC-59)

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Height

1.1mm

Width

1.5mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+125 °C

Length

2.9mm

Product details

N-channel JFET, Toshiba

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more