Toshiba N-Channel MOSFET Transistor, 18 A, 500 V, 3-Pin TO-3PNIS 2SK2917(F)
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-3PNIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.8mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
21mm
Country of Origin
Japan
Product details
MOSFET N-Channel, Discontinued 2SK Series, Toshiba
MOSFET Transistors, Toshiba
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-3PNIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.8mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
21mm
Country of Origin
Japan
Product details
MOSFET N-Channel, Discontinued 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products