Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.9V
Country of Origin
Malaysia
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
3.080 OMR
0.616 OMR Each (In a Pack of 5) (ex VAT)
3.234 OMR
0.647 OMR Each (In a Pack of 5) (inc. VAT)
5
3.080 OMR
0.616 OMR Each (In a Pack of 5) (ex VAT)
3.234 OMR
0.647 OMR Each (In a Pack of 5) (inc. VAT)
5
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.616 OMR | 3.080 OMR |
| 25 - 45 | 0.605 OMR | 3.025 OMR |
| 50 - 95 | 0.594 OMR | 2.970 OMR |
| 100 - 245 | 0.583 OMR | 2.915 OMR |
| 250+ | 0.583 OMR | 2.915 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.9V
Country of Origin
Malaysia
Product details


