Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
4.372 OMR
0.874 OMR Each (In a Pack of 5) (ex VAT)
4.591 OMR
0.918 OMR Each (In a Pack of 5) (inc. VAT)
5
4.372 OMR
0.874 OMR Each (In a Pack of 5) (ex VAT)
4.591 OMR
0.918 OMR Each (In a Pack of 5) (inc. VAT)
5
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.874 OMR | 4.372 OMR |
| 25 - 45 | 0.858 OMR | 4.290 OMR |
| 50 - 95 | 0.836 OMR | 4.180 OMR |
| 100 - 245 | 0.820 OMR | 4.098 OMR |
| 250+ | 0.814 OMR | 4.070 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Series
2SK
Package Type
SC-67
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Malaysia
Product details


