Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
Country of Origin
Japan
Product details
MOSFET P-Channel, SSM3J Series, Toshiba
MOSFET Transistors, Toshiba
2.640 OMR
0.088 OMR Each (In a Pack of 30) (ex VAT)
2.772 OMR
0.092 OMR Each (In a Pack of 30) (inc. VAT)
30
2.640 OMR
0.088 OMR Each (In a Pack of 30) (ex VAT)
2.772 OMR
0.092 OMR Each (In a Pack of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 30 - 120 | 0.088 OMR | 2.640 OMR |
| 150+ | 0.082 OMR | 2.475 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
136 mΩ
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
5.9 nC @ -10 V nC
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
Country of Origin
Japan
Product details


