Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SSM
Series
SSM3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
1.6mm
Maximum Operating Temperature
+150 °C
Width
0.8mm
Height
0.7mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET N-Channel, SSM3K Series, Toshiba
MOSFET Transistors, Toshiba
0.578 OMR
0.058 OMR Each (In a Pack of 10) (ex VAT)
0.607 OMR
0.061 OMR Each (In a Pack of 10) (inc. VAT)
10
0.578 OMR
0.058 OMR Each (In a Pack of 10) (ex VAT)
0.607 OMR
0.061 OMR Each (In a Pack of 10) (inc. VAT)
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 290 | 0.058 OMR | 0.578 OMR |
300 - 990 | 0.047 OMR | 0.472 OMR |
1000+ | 0.042 OMR | 0.420 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Package Type
SSM
Series
SSM3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
1.6mm
Maximum Operating Temperature
+150 °C
Width
0.8mm
Height
0.7mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details