Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
3.4 nC @ 4.5 V
Height
0.8mm
Country of Origin
Thailand
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0.045 OMR
Each (On a Reel of 3000) (ex VAT)
0.047 OMR
Each (On a Reel of 3000) (inc VAT)
3000
0.045 OMR
Each (On a Reel of 3000) (ex VAT)
0.047 OMR
Each (On a Reel of 3000) (inc VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | 0.045 OMR | 135.000 OMR |
6000 - 6000 | 0.045 OMR | 135.000 OMR |
9000+ | 0.040 OMR | 120.000 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
3.4 nC @ 4.5 V
Height
0.8mm
Country of Origin
Thailand