Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
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3.575 OMR
0.072 OMR Each (In a Pack of 50) (ex VAT)
3.754 OMR
0.076 OMR Each (In a Pack of 50) (inc. VAT)
Standard
50
3.575 OMR
0.072 OMR Each (In a Pack of 50) (ex VAT)
3.754 OMR
0.076 OMR Each (In a Pack of 50) (inc. VAT)
Standard
50
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Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 100 | 0.072 OMR | 3.575 OMR |
| 150 - 450 | 0.060 OMR | 3.025 OMR |
| 500 - 950 | 0.050 OMR | 2.475 OMR |
| 1000+ | 0.044 OMR | 2.200 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products