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Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU

RS Stock No.: 171-2490PBrand: ToshibaManufacturers Part No.: SSM6K403TU
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

UF6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Number of Elements per Chip

1

Width

2mm

Length

1.7mm

Typical Gate Charge @ Vgs

16.8 nC @ 4 V

Maximum Operating Temperature

+150 °C

Height

0.7mm

Country of Origin

Thailand

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU
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Production pack (Reel)

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Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25P.O.A.
50P.O.A.
75P.O.A.
100P.O.A.
125P.O.A.
150P.O.A.
175P.O.A.
200P.O.A.
225P.O.A.
250P.O.A.
275P.O.A.
300P.O.A.
325P.O.A.
350P.O.A.
375P.O.A.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Package Type

UF6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±10 V

Number of Elements per Chip

1

Width

2mm

Length

1.7mm

Typical Gate Charge @ Vgs

16.8 nC @ 4 V

Maximum Operating Temperature

+150 °C

Height

0.7mm

Country of Origin

Thailand

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more