Toshiba Silicon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 T2N7002AK,LM(T
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Transistor Material
Silicon
Number of Elements per Chip
1
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33.000 OMR
0.011 OMR Each (On a Reel of 3000) (ex VAT)
34.650 OMR
0.012 OMR Each (On a Reel of 3000) (inc. VAT)
3000
33.000 OMR
0.011 OMR Each (On a Reel of 3000) (ex VAT)
34.650 OMR
0.012 OMR Each (On a Reel of 3000) (inc. VAT)
3000
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Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Transistor Material
Silicon
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products