Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
6.435 OMR
3.218 OMR Each (In a Pack of 2) (ex VAT)
6.757 OMR
3.379 OMR Each (In a Pack of 2) (inc. VAT)
2
6.435 OMR
3.218 OMR Each (In a Pack of 2) (ex VAT)
6.757 OMR
3.379 OMR Each (In a Pack of 2) (inc. VAT)
2
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | 3.218 OMR | 6.435 OMR |
| 10 - 18 | 2.497 OMR | 4.994 OMR |
| 20 - 24 | 2.453 OMR | 4.906 OMR |
| 26 - 48 | 2.250 OMR | 4.499 OMR |
| 50+ | 2.046 OMR | 4.092 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
TK090A65Z
Package Type
TO-220SIS
Pin Count
3
Maximum Drain Source Resistance
0.09 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon


