MOSFET Transistor Toshiba TK100A10N1,S4X(S
Technical Document
Specifications
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
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1.395 OMR
Each (Supplied in a Bag) (ex VAT)
1.465 OMR
Each (Supplied in a Bag) (inc VAT)
2
1.395 OMR
Each (Supplied in a Bag) (ex VAT)
1.465 OMR
Each (Supplied in a Bag) (inc VAT)
2
Buy in bulk
| quantity | Unit price | Per Bag |
|---|---|---|
| 2 - 18 | 1.395 OMR | 2.790 OMR |
| 20 - 38 | 1.230 OMR | 2.460 OMR |
| 40 - 98 | 1.075 OMR | 2.150 OMR |
| 100 - 498 | 1.005 OMR | 2.010 OMR |
| 500+ | 0.950 OMR | 1.900 OMR |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaMaximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220SIS
Maximum Drain Source Resistance
3,8 mΩ
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC při 10 V
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products