N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
0.505 OMR
Each (In a Pack of 5) (ex VAT)
0.530 OMR
Each (In a Pack of 5) (inc. VAT)
5
0.505 OMR
Each (In a Pack of 5) (ex VAT)
0.530 OMR
Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.505 OMR | 2.525 OMR |
| 25 - 45 | 0.335 OMR | 1.675 OMR |
| 50 - 120 | 0.330 OMR | 1.650 OMR |
| 125 - 245 | 0.330 OMR | 1.650 OMR |
| 250+ | 0.325 OMR | 1.625 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Height
15mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products