Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
3.438 OMR
0.688 OMR Each (In a Pack of 5) (ex VAT)
3.610 OMR
0.722 OMR Each (In a Pack of 5) (inc. VAT)
5
3.438 OMR
0.688 OMR Each (In a Pack of 5) (ex VAT)
3.610 OMR
0.722 OMR Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.688 OMR | 3.438 OMR |
| 25 - 45 | 0.627 OMR | 3.135 OMR |
| 50 - 245 | 0.616 OMR | 3.080 OMR |
| 250 - 495 | 0.594 OMR | 2.970 OMR |
| 500+ | 0.594 OMR | 2.970 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
6.1mm
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details


