Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
2.338 OMR
0.468 OMR Each (In a Pack of 5) (ex VAT)
2.455 OMR
0.491 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
2.338 OMR
0.468 OMR Each (In a Pack of 5) (ex VAT)
2.455 OMR
0.491 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.468 OMR | 2.338 OMR |
| 25 - 45 | 0.396 OMR | 1.980 OMR |
| 50 - 245 | 0.385 OMR | 1.925 OMR |
| 250 - 495 | 0.374 OMR | 1.870 OMR |
| 500+ | 0.358 OMR | 1.788 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Country of Origin
Japan
Product details


