Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

RS Stock No.: 125-0551Brand: ToshibaManufacturers Part No.: TK20N60W5,S1VF(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

7.562 OMR

1.512 OMR Each (In a Pack of 5) (ex VAT)

7.940 OMR

1.588 OMR Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S

5

Available in multiples of 5
57.562 OMR
1015.125 OMR
1522.688 OMR
2030.250 OMR
2534.100 OMR
3040.920 OMR
3547.740 OMR
4054.560 OMR
4561.380 OMR
5062.150 OMR
5568.365 OMR
6074.580 OMR
6580.795 OMR
7087.010 OMR
7593.225 OMR

7.562 OMR

1.512 OMR Each (In a Pack of 5) (ex VAT)

7.940 OMR

1.588 OMR Each (In a Pack of 5) (inc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 TK20N60W5,S1VF(S
Stock information temporarily unavailable.

5

Available in multiples of 5
57.562 OMR
1015.125 OMR
1522.688 OMR
2030.250 OMR
2534.100 OMR
3040.920 OMR
3547.740 OMR
4054.560 OMR
4561.380 OMR
5062.150 OMR
5568.365 OMR
6074.580 OMR
6580.795 OMR
7087.010 OMR
7593.225 OMR

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 201.512 OMR7.562 OMR
25 - 451.364 OMR6.820 OMR
50+1.243 OMR6.215 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

55 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5.02mm

Length

15.94mm

Forward Diode Voltage

1.7V

Height

20.95mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more