N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 Toshiba TK30E06N1
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
0.440 OMR
Each (In a Pack of 5) (ex VAT)
0.462 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
0.440 OMR
Each (In a Pack of 5) (ex VAT)
0.462 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | 0.440 OMR | 2.200 OMR |
| 50 - 120 | 0.405 OMR | 2.025 OMR |
| 125 - 245 | 0.390 OMR | 1.950 OMR |
| 250 - 495 | 0.360 OMR | 1.800 OMR |
| 500+ | 0.335 OMR | 1.675 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products