Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
21.450 OMR
0.429 OMR Each (In a Tube of 50) (ex VAT)
22.522 OMR
0.450 OMR Each (In a Tube of 50) (inc. VAT)
50
21.450 OMR
0.429 OMR Each (In a Tube of 50) (ex VAT)
22.522 OMR
0.450 OMR Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | 0.429 OMR | 21.450 OMR |
| 250 - 950 | 0.363 OMR | 18.150 OMR |
| 1000 - 2450 | 0.358 OMR | 17.875 OMR |
| 2500+ | 0.358 OMR | 17.875 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
13.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details


