Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
2.541 OMR
2.541 OMR Each (ex VAT)
2.668 OMR
2.668 OMR Each (inc. VAT)
1
2.541 OMR
2.541 OMR Each (ex VAT)
2.668 OMR
2.668 OMR Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 9 | 2.541 OMR |
10 - 49 | 2.095 OMR |
50 - 99 | 1.911 OMR |
100 - 199 | 1.864 OMR |
200+ | 1.832 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
China
Product details