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Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

RS Stock No.: 896-2372Brand: ToshibaManufacturers Part No.: TK39N60W,S1VF(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

2.541 OMR

2.541 OMR Each (ex VAT)

2.668 OMR

2.668 OMR Each (inc. VAT)

Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S

2.541 OMR

2.541 OMR Each (ex VAT)

2.668 OMR

2.668 OMR Each (inc. VAT)

Toshiba N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 TK39N60W,S1VF(S
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 92.541 OMR
10 - 492.095 OMR
50 - 991.911 OMR
100 - 1991.864 OMR
200+1.832 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.94mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20.95mm

Country of Origin

China

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more