Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 5 V, 38 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
1.348 OMR
0.270 OMR Each (In a Pack of 5) (ex VAT)
1.415 OMR
0.283 OMR Each (In a Pack of 5) (inc. VAT)
5
1.348 OMR
0.270 OMR Each (In a Pack of 5) (ex VAT)
1.415 OMR
0.283 OMR Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.270 OMR | 1.348 OMR |
50 - 95 | 0.165 OMR | 0.825 OMR |
100+ | 0.160 OMR | 0.798 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 5 V, 38 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details