Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
4.235 OMR
4.235 OMR Each (ex VAT)
4.447 OMR
4.447 OMR Each (inc. VAT)
1
4.235 OMR
4.235 OMR Each (ex VAT)
4.447 OMR
4.447 OMR Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 9 | 4.235 OMR |
10 - 49 | 3.470 OMR |
50 - 99 | 3.179 OMR |
100 - 199 | 2.970 OMR |
200+ | 2.761 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.02mm
Transistor Material
Si
Height
20.95mm
Country of Origin
China
Product details