Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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2.850 OMR
0.285 OMR Each (In a Pack of 10) (ex VAT)
2.992 OMR
0.299 OMR Each (In a Pack of 10) (inc. VAT)
10
2.850 OMR
0.285 OMR Each (In a Pack of 10) (ex VAT)
2.992 OMR
0.299 OMR Each (In a Pack of 10) (inc. VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | 0.285 OMR | 2.850 OMR |
50 - 90 | 0.260 OMR | 2.600 OMR |
100 - 490 | 0.255 OMR | 2.550 OMR |
500 - 990 | 0.250 OMR | 2.500 OMR |
1000+ | 0.245 OMR | 2.450 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details