Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
15mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
49.500 OMR
0.990 OMR Each (In a Tube of 50) (ex VAT)
51.975 OMR
1.040 OMR Each (In a Tube of 50) (inc. VAT)
50
49.500 OMR
0.990 OMR Each (In a Tube of 50) (ex VAT)
51.975 OMR
1.040 OMR Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | 0.990 OMR | 49.500 OMR |
| 250 - 450 | 0.918 OMR | 45.925 OMR |
| 500+ | 0.896 OMR | 44.825 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220SIS
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Length
10mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
15mm
Country of Origin
Japan
Product details


