Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
6.314 OMR
1.578 OMR Each (In a Pack of 4) (ex VAT)
6.630 OMR
1.657 OMR Each (In a Pack of 4) (inc. VAT)
Standard
4
6.314 OMR
1.578 OMR Each (In a Pack of 4) (ex VAT)
6.630 OMR
1.657 OMR Each (In a Pack of 4) (inc. VAT)
Standard
4
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 4 - 36 | 1.578 OMR | 6.314 OMR |
| 40 - 76 | 1.392 OMR | 5.566 OMR |
| 80 - 196 | 1.216 OMR | 4.862 OMR |
| 200 - 996 | 1.138 OMR | 4.554 OMR |
| 1000+ | 1.089 OMR | 4.356 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Country of Origin
China
Product details


