N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
SOP Advanced
Series
TPH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
0.95mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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0.410 OMR
Each (On a Reel of 5000) (ex VAT)
0.430 OMR
Each (On a Reel of 5000) (inc. VAT)
5000
0.410 OMR
Each (On a Reel of 5000) (ex VAT)
0.430 OMR
Each (On a Reel of 5000) (inc. VAT)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
SOP Advanced
Series
TPH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
0.95mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products