Toshiba U-MOSVIII-H N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP TPH8R903NL,LQ(S

RS Stock No.: 133-2810Brand: ToshibaManufacturers Part No.: TPH8R903NL,LQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Forward Diode Voltage

1.2V

Height

0.95mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

3.960 OMR

0.198 OMR Each (In a Pack of 20) (ex VAT)

4.158 OMR

0.208 OMR Each (In a Pack of 20) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP TPH8R903NL,LQ(S

3.960 OMR

0.198 OMR Each (In a Pack of 20) (ex VAT)

4.158 OMR

0.208 OMR Each (In a Pack of 20) (inc. VAT)

Toshiba U-MOSVIII-H N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP TPH8R903NL,LQ(S
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
20 - 800.198 OMR3.960 OMR
100 - 1800.187 OMR3.740 OMR
200 - 9800.182 OMR3.630 OMR
1000 - 19800.182 OMR3.630 OMR
2000+0.176 OMR3.520 OMR

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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

30 V

Series

U-MOSVIII-H

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Typical Gate Charge @ Vgs

9.8 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Forward Diode Voltage

1.2V

Height

0.95mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more