Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
2.530 OMR
0.126 OMR Each (In a Pack of 20) (ex VAT)
2.656 OMR
0.132 OMR Each (In a Pack of 20) (inc. VAT)
20
2.530 OMR
0.126 OMR Each (In a Pack of 20) (ex VAT)
2.656 OMR
0.132 OMR Each (In a Pack of 20) (inc. VAT)
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | 0.126 OMR | 2.530 OMR |
| 100 - 180 | 0.110 OMR | 2.200 OMR |
| 200 - 980 | 0.104 OMR | 2.090 OMR |
| 1000 - 1980 | 0.099 OMR | 1.980 OMR |
| 2000+ | 0.099 OMR | 1.980 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
TSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
3.1mm
Length
3.1mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.85mm
Country of Origin
Japan
Product details


