Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
3.685 OMR
0.737 OMR Each (In a Pack of 5) (ex VAT)
3.869 OMR
0.774 OMR Each (In a Pack of 5) (inc. VAT)
5
3.685 OMR
0.737 OMR Each (In a Pack of 5) (ex VAT)
3.869 OMR
0.774 OMR Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.737 OMR | 3.685 OMR |
| 25+ | 0.632 OMR | 3.162 OMR |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details


