Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3

RS Stock No.: 178-3901Brand: Vishay SiliconixManufacturers Part No.: SiA106DJ-T1-GE3
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

SC-70-6L

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Number of Elements per Chip

1

Width

1.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Country of Origin

China

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Stock information temporarily unavailable.

2.860 OMR

0.286 OMR Each (In a Pack of 10) (ex VAT)

3.003 OMR

0.300 OMR Each (In a Pack of 10) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
Select packaging type

2.860 OMR

0.286 OMR Each (In a Pack of 10) (ex VAT)

3.003 OMR

0.300 OMR Each (In a Pack of 10) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 400.286 OMR2.860 OMR
50 - 900.258 OMR2.585 OMR
100 - 4900.242 OMR2.420 OMR
500 - 9900.231 OMR2.310 OMR
1000+0.204 OMR2.035 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

SC-70-6L

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Number of Elements per Chip

1

Width

1.35mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more