Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay Siliconix

RS Stock No.: 178-3705Brand: Vishay SiliconixManufacturers Part No.: SIZF916DT-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

40 (Channnel 1) A, 60 (Channel 2) A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAIR 6 x 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

26.6 W, 60 W

Maximum Gate Source Voltage

+16 V, +20 V, -12 V, -16 V

Width

6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V

Height

0.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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0.220 OMR

Each (On a Reel of 3000) (ex VAT)

0.231 OMR

Each (On a Reel of 3000) (inc VAT)

Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay Siliconix

3000

Available in multiples of 3000
3000660.000 OMR
60001,320.000 OMR
90001,980.000 OMR
120002,640.000 OMR
150003,300.000 OMR
180003,960.000 OMR
210004,620.000 OMR
240005,280.000 OMR
270005,940.000 OMR
300006,600.000 OMR
330007,260.000 OMR
360007,920.000 OMR
390008,580.000 OMR
420009,240.000 OMR
450009,900.000 OMR

0.220 OMR

Each (On a Reel of 3000) (ex VAT)

0.231 OMR

Each (On a Reel of 3000) (inc VAT)

Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay Siliconix
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000660.000 OMR
60001,320.000 OMR
90001,980.000 OMR
120002,640.000 OMR
150003,300.000 OMR
180003,960.000 OMR
210004,620.000 OMR
240005,280.000 OMR
270005,940.000 OMR
300006,600.000 OMR
330007,260.000 OMR
360007,920.000 OMR
390008,580.000 OMR
420009,240.000 OMR
450009,900.000 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

40 (Channnel 1) A, 60 (Channel 2) A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

PowerPAIR 6 x 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

26.6 W, 60 W

Maximum Gate Source Voltage

+16 V, +20 V, -12 V, -16 V

Width

6mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V

Height

0.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more