Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Transistor Material
Si
Width
1.4mm
Automotive Standard
AEC-Q101
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
6.600 OMR
0.264 OMR Each (In a Pack of 25) (ex VAT)
6.930 OMR
0.277 OMR Each (In a Pack of 25) (inc. VAT)
Standard
25
6.600 OMR
0.264 OMR Each (In a Pack of 25) (ex VAT)
6.930 OMR
0.277 OMR Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 75 | 0.264 OMR | 6.600 OMR |
| 100 - 475 | 0.187 OMR | 4.675 OMR |
| 500 - 975 | 0.154 OMR | 3.850 OMR |
| 1000+ | 0.132 OMR | 3.300 OMR |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Transistor Material
Si
Width
1.4mm
Automotive Standard
AEC-Q101
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China


