Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
6.160 OMR
0.616 OMR Each (In a Pack of 10) (ex VAT)
6.468 OMR
0.647 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
6.160 OMR
0.616 OMR Each (In a Pack of 10) (ex VAT)
6.468 OMR
0.647 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.616 OMR | 6.160 OMR |
| 100 - 490 | 0.522 OMR | 5.225 OMR |
| 500 - 990 | 0.462 OMR | 4.620 OMR |
| 1000+ | 0.402 OMR | 4.015 OMR |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China


