Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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1.005 OMR
Each (ex VAT)
1.055 OMR
Each (inc VAT)
1
1.005 OMR
Each (ex VAT)
1.055 OMR
Each (inc VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | 1.005 OMR |
10 - 49 | 0.900 OMR |
50 - 99 | 0.880 OMR |
100 - 249 | 0.845 OMR |
250+ | 0.800 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
38 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details