Vishay N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB IRF840LCPBF

Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
1.248 OMR
1.248 OMR Each (ex VAT)
1.310 OMR
1.310 OMR Each (inc. VAT)
Standard
1
1.248 OMR
1.248 OMR Each (ex VAT)
1.310 OMR
1.310 OMR Each (inc. VAT)
Standard
1
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Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | 1.248 OMR |
| 10 - 49 | 1.150 OMR |
| 50 - 99 | 1.106 OMR |
| 100 - 249 | 1.084 OMR |
| 250+ | 0.996 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details

