Vishay P-Channel MOSFET, 6.8 A, 100 V, 3-Pin TO-220AB IRF9520PBF

Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
5.940 OMR
0.594 OMR Each (In a Pack of 10) (ex VAT)
6.237 OMR
0.624 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
5.940 OMR
0.594 OMR Each (In a Pack of 10) (ex VAT)
6.237 OMR
0.624 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | 0.594 OMR | 5.940 OMR |
| 50 - 90 | 0.583 OMR | 5.830 OMR |
| 100 - 240 | 0.506 OMR | 5.060 OMR |
| 250 - 490 | 0.495 OMR | 4.950 OMR |
| 500+ | 0.407 OMR | 4.070 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
18 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details

