Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
10.780 OMR
1.078 OMR Each (In a Pack of 10) (ex VAT)
11.319 OMR
1.132 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
10.780 OMR
1.078 OMR Each (In a Pack of 10) (ex VAT)
11.319 OMR
1.132 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 10 | 1.078 OMR | 10.780 OMR |
| 20 - 40 | 1.012 OMR | 10.120 OMR |
| 50 - 90 | 0.918 OMR | 9.185 OMR |
| 100 - 240 | 0.864 OMR | 8.635 OMR |
| 250+ | 0.820 OMR | 8.195 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.8 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
9.65mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Country of Origin
China
Product details


