Vishay P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB IRF9Z10PBF

RS Stock No.: 815-2679Brand: VishayManufacturers Part No.: IRF9Z10PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Height

15.49mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

7.205 OMR

0.720 OMR Each (In a Pack of 10) (ex VAT)

7.565 OMR

0.756 OMR Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB IRF9Z10PBF
Select packaging type

7.205 OMR

0.720 OMR Each (In a Pack of 10) (ex VAT)

7.565 OMR

0.756 OMR Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB IRF9Z10PBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
10 - 900.720 OMR7.205 OMR
100 - 2400.550 OMR5.500 OMR
250 - 4900.506 OMR5.060 OMR
500 - 9900.440 OMR4.400 OMR
1000+0.385 OMR3.850 OMR

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Height

15.49mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more