Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin
Technical Document
Specifications
Brand
VishayProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4.1A
Maximum Drain Source Voltage Vds
800V
Pin Count
3
Maximum Drain Source Resistance Rds
3Ω
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.8V
Typical Gate Charge Qg @ Vgs
78nC
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
±20 V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Standards/Approvals
IEC 61249-2-21, RoHS 2002/95/EC
Number of Elements per Chip
1
Automotive Standard
No
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
40.150 OMR
0.803 OMR Each (In a Tube of 50) (ex VAT)
42.158 OMR
0.843 OMR Each (In a Tube of 50) (inc. VAT)
50
40.150 OMR
0.803 OMR Each (In a Tube of 50) (ex VAT)
42.158 OMR
0.843 OMR Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 0.803 OMR | 40.150 OMR |
| 100 - 200 | 0.759 OMR | 37.950 OMR |
| 250 - 450 | 0.682 OMR | 34.100 OMR |
| 500 - 1200 | 0.654 OMR | 32.725 OMR |
| 1250+ | 0.622 OMR | 31.075 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4.1A
Maximum Drain Source Voltage Vds
800V
Pin Count
3
Maximum Drain Source Resistance Rds
3Ω
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.8V
Typical Gate Charge Qg @ Vgs
78nC
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
±20 V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Standards/Approvals
IEC 61249-2-21, RoHS 2002/95/EC
Number of Elements per Chip
1
Automotive Standard
No
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products