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Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRFD120PBF

RS Stock No.: 178-0921Brand: VishayManufacturers Part No.: IRFD120PBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.29mm

Length

5mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

3.37mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

21.000 OMR

0.210 OMR Each (In a Tube of 100) (ex VAT)

22.050 OMR

0.220 OMR Each (In a Tube of 100) (inc. VAT)

Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRFD120PBF

21.000 OMR

0.210 OMR Each (In a Tube of 100) (ex VAT)

22.050 OMR

0.220 OMR Each (In a Tube of 100) (inc. VAT)

Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRFD120PBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
100 - 1000.210 OMR21.000 OMR
200 - 4000.194 OMR19.425 OMR
500+0.178 OMR17.850 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.29mm

Length

5mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

3.37mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more