Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.29mm
Length
5mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
21.000 OMR
0.210 OMR Each (In a Tube of 100) (ex VAT)
22.050 OMR
0.220 OMR Each (In a Tube of 100) (inc. VAT)
100
21.000 OMR
0.210 OMR Each (In a Tube of 100) (ex VAT)
22.050 OMR
0.220 OMR Each (In a Tube of 100) (inc. VAT)
100
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
100 - 100 | 0.210 OMR | 21.000 OMR |
200 - 400 | 0.194 OMR | 19.425 OMR |
500+ | 0.178 OMR | 17.850 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
6.29mm
Length
5mm
Typical Gate Charge @ Vgs
16 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
3.37mm
Product details