Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
4.400 OMR
0.440 OMR Each (In a Pack of 10) (ex VAT)
4.620 OMR
0.462 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
4.400 OMR
0.440 OMR Each (In a Pack of 10) (ex VAT)
4.620 OMR
0.462 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.440 OMR | 4.400 OMR |
| 100 - 490 | 0.412 OMR | 4.125 OMR |
| 500 - 990 | 0.374 OMR | 3.740 OMR |
| 1000 - 2490 | 0.358 OMR | 3.575 OMR |
| 2500+ | 0.341 OMR | 3.410 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


