Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
24 nC @ 10 V
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
0.600 OMR
Each (In a Tube of 50) (ex VAT)
0.630 OMR
Each (In a Tube of 50) (inc VAT)
50
0.600 OMR
Each (In a Tube of 50) (ex VAT)
0.630 OMR
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.600 OMR | 30.000 OMR |
100 - 200 | 0.515 OMR | 25.750 OMR |
250+ | 0.480 OMR | 24.000 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
24 nC @ 10 V
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details