Vishay P-Channel MOSFET, 1.9 A, 200 V, 3-Pin TO-220FP IRFI9620GPBF

RS Stock No.: 815-2714Brand: VishayManufacturers Part No.: IRFI9620GPBF
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.63mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.12mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

6.160 OMR

0.616 OMR Each (In a Pack of 10) (ex VAT)

6.468 OMR

0.647 OMR Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 1.9 A, 200 V, 3-Pin TO-220FP IRFI9620GPBF
Select packaging type

6.160 OMR

0.616 OMR Each (In a Pack of 10) (ex VAT)

6.468 OMR

0.647 OMR Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 1.9 A, 200 V, 3-Pin TO-220FP IRFI9620GPBF
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
10 - 400.616 OMR6.160 OMR
50 - 900.578 OMR5.775 OMR
100 - 2400.522 OMR5.225 OMR
250 - 4900.495 OMR4.950 OMR
500+0.468 OMR4.675 OMR

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.63mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.12mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more