Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
6.160 OMR
0.616 OMR Each (In a Pack of 10) (ex VAT)
6.468 OMR
0.647 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
6.160 OMR
0.616 OMR Each (In a Pack of 10) (ex VAT)
6.468 OMR
0.647 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | 0.616 OMR | 6.160 OMR |
| 50 - 90 | 0.578 OMR | 5.775 OMR |
| 100 - 240 | 0.522 OMR | 5.225 OMR |
| 250 - 490 | 0.495 OMR | 4.950 OMR |
| 500+ | 0.468 OMR | 4.675 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.63mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
16.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


