Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
5.665 OMR
1.133 OMR Each (In a Pack of 5) (ex VAT)
5.948 OMR
1.190 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
5.665 OMR
1.133 OMR Each (In a Pack of 5) (ex VAT)
5.948 OMR
1.190 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | 1.133 OMR | 5.665 OMR |
| 50 - 120 | 0.962 OMR | 4.812 OMR |
| 125 - 245 | 0.908 OMR | 4.538 OMR |
| 250 - 495 | 0.852 OMR | 4.262 OMR |
| 500+ | 0.803 OMR | 4.015 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
250 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


