Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
7.480 OMR
0.374 OMR Each (In a Pack of 20) (ex VAT)
7.854 OMR
0.393 OMR Each (In a Pack of 20) (inc. VAT)
Standard
20
7.480 OMR
0.374 OMR Each (In a Pack of 20) (ex VAT)
7.854 OMR
0.393 OMR Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 20 | 0.374 OMR | 7.480 OMR |
| 40 - 80 | 0.297 OMR | 5.940 OMR |
| 100 - 180 | 0.264 OMR | 5.280 OMR |
| 200 - 480 | 0.248 OMR | 4.950 OMR |
| 500+ | 0.209 OMR | 4.180 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Length
6.7mm
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details


