Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
15.87mm
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
13.805 OMR
2.761 OMR Each (In a Pack of 5) (ex VAT)
14.495 OMR
2.899 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
13.805 OMR
2.761 OMR Each (In a Pack of 5) (ex VAT)
14.495 OMR
2.899 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 2.761 OMR | 13.805 OMR |
| 25 - 45 | 2.348 OMR | 11.742 OMR |
| 50 - 120 | 2.211 OMR | 11.055 OMR |
| 125 - 245 | 2.074 OMR | 10.368 OMR |
| 250+ | 1.947 OMR | 9.735 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
110 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
15.87mm
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details


