Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
400 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Production pack (Tube)
1
P.O.A.
Production pack (Tube)
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
400 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details