Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.31mm
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.82mm
Country of Origin
China
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
29.012 OMR
1.160 OMR Each (In a Tube of 25) (ex VAT)
30.463 OMR
1.218 OMR Each (In a Tube of 25) (inc. VAT)
25
29.012 OMR
1.160 OMR Each (In a Tube of 25) (ex VAT)
30.463 OMR
1.218 OMR Each (In a Tube of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 25 | 1.160 OMR | 29.012 OMR |
| 50 - 100 | 1.111 OMR | 27.775 OMR |
| 125+ | 1.034 OMR | 25.850 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.31mm
Length
15.87mm
Typical Gate Charge @ Vgs
85 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.82mm
Country of Origin
China
Product details


