Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF

Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
190 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
2.134 OMR
2.134 OMR Each (ex VAT)
2.241 OMR
2.241 OMR Each (inc. VAT)
Standard
1
2.134 OMR
2.134 OMR Each (ex VAT)
2.241 OMR
2.241 OMR Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | 2.134 OMR |
| 10 - 24 | 1.842 OMR |
| 25 - 49 | 1.749 OMR |
| 50 - 99 | 1.666 OMR |
| 100+ | 1.468 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
190 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details

